BCV28T/R NXP Semiconductors, BCV28T/R Datasheet - Page 2

• Manufacturer Part Number: BCV28T/R
• Manufacturer: NXP Semiconductors

Specifications of BCV28T/R

• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 1.5@0.1mA@100mAV
• Collector-emitter Saturation Voltage: 1@0.1mA@100mAV
• Dc Current Gain: 4000@1mA@5V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
FEATURES
• Very high DC current gain (min. 10 000)
• High current (max. 500 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BCV29 and BCV49.
MARKING
ORDERING INFORMATION
2004 Dec 06
BCV28
BCV48
BCV28
BCV48
TYPE NUMBER
PNP Darlington transistors
TYPE NUMBER
NAME
SC-62
MARKING CODE
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
ED
EE
2
PINNING
DESCRIPTION
PACKAGE
Fig.1 Simplified outline (SOT89) and symbol.
PIN
1
2
3
3
2
emitter
collector
base
1
DESCRIPTION
BCV28; BCV48
3
Product data sheet
TR1
VERSION
SOT89
2
1
sym088
TR2