MT49H64M9CHU-18:A Micron Technology Inc, MT49H64M9CHU-18:A Datasheet - Page 41

MT49H64M9CHU-18:A

Manufacturer Part Number
MT49H64M9CHU-18:A
Description
Manufacturer
Micron Technology Inc
Type
RLDRAMr
Datasheet

Specifications of MT49H64M9CHU-18:A

Organization
64Mx9
Address Bus
25b
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
985mA
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
Operations
INITIALIZATION
PDF: 09005aef815b2df8/Source: 09005aef811ba111
576Mb_RLDRAM_II_SIO_Core2.fm - Rev. F 6/09 EN
Notes:
1. It is possible to apply Vddq before Vdd. However, when doing this, the Ds, DM, Qs,
2. If Vid(DC) on CK/CK# can not be met prior to being applied to the RLDRAM, placing a
1. Apply power (Vext, Vdd, Vddq, Vref, Vtt) and start clock as soon as the supply voltages
2. Maintain stable conditions for 200µs (MIN).
3. Issue at least three consecutive MRS commands: two dummies or more plus one valid
4.
The RLDRAM must be powered up and initialized in a predefined manner. Operational
procedures other than those specified may result in undefined operations or permanent
damage to the device.
The following sequence is used for power-up:
are stable. Apply Vdd and Vext before or at the same time as Vddq.
or at the same time as Vref and Vtt. Although there is no timing relation between Vext
and Vdd, the chip starts the power-up sequence only after both voltages approach
their nominal levels. CK/CK# must meet Vid(DC) prior to being applied.
conditions to command pins. Ensuring CK/CK# meet Vid(DC) while applying NOP
conditions to the command pins guarantees that the RLDRAM will not receive
unwanted commands during initialization.
MRS. The purpose of these consecutive MRS commands is to internally reset the logic
of the RLDRAM. Note that
commands. It is recommended that all address pins are held LOW during the dummy
MRS commands.
t
1,024 NOP commands) must be issued prior to normal operation. The sequence of
the eight AUTO REFRESH commands (with respect to the 1,024 NOP commands)
does not matter. As is required for any operation,
REFRESH command and a subsequent VALID command to the same bank. Note that
previous versions of the data sheet required each of these AUTO REFRESH commands
be separated by 2,048 NOP commands. This properly initializes the RLDRAM but is
no longer required.
and all other pins with an output driver, will go HIGH instead of tri-stating. These pins
will remain HIGH until Vdd is at the same level as Vddq. Care should be taken to avoid
bus conflicts during this period.
large external resistor from CS# to Vdd is a viable option for ensuring the command
bus does not receive unwanted commands during this unspecified state.
MRSC after the valid MRS, an AUTO REFRESH command to all 8 banks (along with
576Mb: x9, x18 2.5V Vext, 1.8V Vdd, HSTL, SIO, RLDRAM II
t
41
MRSC does not need to be met between these consecutive
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RC must be met between an AUTO
©2004 Micron Technology, Inc. All rights reserved.
1
Apply Vddq before
Operations
2
Apply NOP

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