MT47H64M8B6-37E:D Micron Technology Inc, MT47H64M8B6-37E:D Datasheet - Page 111
MT47H64M8B6-37E:D
Manufacturer Part Number
MT47H64M8B6-37E:D
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H64M8B6-37ED.pdf
(139 pages)
Specifications of MT47H64M8B6-37E:D
Organization
64Mx8
Density
512Mb
Address Bus
16b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
145mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H64M8B6-37E:D
Manufacturer:
MICRON
Quantity:
12 388
Company:
Part Number:
MT47H64M8B6-37E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 60: Write Burst
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
Address
DI b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
WL ± t DQSS
WL - t DQSS
WL + t DQSS
NOP
T1
111
DI
b
NOP
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
b
DI
b
512Mb: x4, x8, x16 DDR2 SDRAM
Transitioning Data
T2n
t DQSS 5
NOP
T3
5
t DQSS 5
T3n
© 2004 Micron Technology, Inc. All rights reserved.
t
NOP
DQSS.
T4
Don’t Care
WRITE
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