MT41J256M8HX-125:D Micron Technology Inc, MT41J256M8HX-125:D Datasheet - Page 59

• Manufacturer Part Number: MT41J256M8HX-125:D
• Description: MICMT41J256M8HX-125:D 2GB DDR3 SDRAM
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-125:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 185mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Compliant

Table 33: R
ODT Sensitivity
Table 34: ODT Sensitivity Definition
ODT Timing Definitions
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
Symbol
[9, 6, 2]
1, 0, 0
MR1
R
TT
TT
Effective Impedances (Continued)
0.9 - dR
20Ω
R
TT
Note:
Note:
Note:
TT
dT × |DT| - dR
20Ω
If either the temperature or voltage changes after I/O calibration, then the tolerance
limits listed in Table 32 (page 57) and Table 33 can be expected to widen according to
Table 34 and Table 35 (page 59).
Table 35: ODT Temperature and Voltage Sensitivity
ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 23. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another de-
fines when ODT turns on or off dynamically. Table 36 outlines and provides definition
and measurement references settings for each parameter (see Table 37 (page 60)).
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
1. Values assume an RZQ of 240Ω (±1%).
1. ΔT = T - T(@ calibration), ΔV = V
1. ΔT = T - T(@ calibration), ΔV = V
R
R
Resistor
Min
TT20(PD40)
TT20(PU40)
Change
dR
dR
TT
dV × |DV|
TT
TT
dV
dT
V
IL(AC)
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
V
to V
OUT
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
IH(AC)
59
1.6 + dR
DDQ
DDQ
Min
0
0
TT
Min
dT × |DT| + dR
- V
- V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0.6
0.9
0.9
0.9
0.9
0.6
0.9
DDQ
DDQ
Max
(@ calibration) and V
(@ calibration) and V
2Gb: x4, x8, x16 DDR3 SDRAM
TT
Nom
1.0
1.0
1.0
1.0
1.0
1.0
1.0
dV × |DV|
Max
0.15
1.5
ODT Characteristics
© 2006 Micron Technology, Inc. All rights reserved.
DD
DD
Max
= V
= V
1.1
1.1
1.4
1.4
1.1
1.1
1.6
RZQ/(2, 4, 6, 8, 12)
DDQ
DDQ
.
.
Units
%/mV
Units
%/°C
RZQ/12
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units