NP8P128A13B1760E Micron Technology Inc, NP8P128A13B1760E Datasheet - Page 60
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NP8P128A13B1760E
Manufacturer Part Number
NP8P128A13B1760E
Description
Manufacturer
Micron Technology Inc
Datasheet
1.NP8P128A13B1760E.pdf
(94 pages)
Specifications of NP8P128A13B1760E
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NP8P128A13B1760E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
15.0
15.1
Table 26: DC Current Characteristics
Note:
Datasheet
60
I
I
I
I
I
I
I
I
I
I
I
IPPES
I
I
I
Sym
LI
LO
CCS
CCD
CCR
CCW,
CCE
CCWS
CCES
PPS
PPWS
PPR
PPW
PPE
Refer
Input Load
Output
Leakage
V
Standby,
Power Down 128-Mbit
Average
V
Read
V
V
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
PP
Standby
Read
Write
Write Suspend
Erase Suspend
Erase
Write,
Erase
Write Suspend
Erase Suspend
Table 27 on page 61
Electrical Specifications
DC Current Characteristics
Parameter
DQ
Asynchronous single
word
f = 5MHz (1 CLK)
Page Mode
f = 13 MHz (9 CLK)
15-0
(1)
for the Notes relevant to this table.
3,4,5,
Note
11
12
9
6
3
3
3
CMOS Inputs
Refer to I
0.05
0.05
Typ
1.7v - 3.6v
0.2
80
30
15
35
2
V
CCQ
Max
0.10
0.10
160
±1
±1
42
20
50
CCS
15
5
above.
for each density
0.05
0.05
TTL Inputs
Typ
2.4v - 3.6v
0.2
80
30
15
36
2
V
CCQ
Max
0.10
0.10
±10
160
±2
42
20
51
15
5
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
Numonyx® Omneo™ P8P Datasheet
V
V
V
V
V
V
V
CE# = V
WP# = V
Must reach stated I
CE# = V
Internal 8 Word
Read
8 Word Read
program/erase in progress
CE# = V
V
V
write in progress
erase in progress
CC
CCQ
IN
CC
CCQ
IN
CC
PP
PP
= V
= V
= V
≤ V
= V
= V
= V
= V
= V
CC
CCQ
CCQ
PPL
CCMAX
CCMAX
CCMAX,
CCQ,
IH
CCQ
Test Condition
CCQMAX
CCQMAX
IH
, suspend in progress
or GND
or GND
, suspend in progress
RST# = V
V
CCQ
V
CE# = V
OE# = V
Inputs: V
V
CCS
CC
IL
= V
August 2010
≤ 5µS after
= V
CCQ
316144-07
CCQMAX
CCMAX
IL
IH
IH
or