MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 76

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

ERASE Operations
ERASE Operations
MULTI-PLANE ERASE Operations
ERASE BLOCK (60h–D0h)
Figure 50:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
ERASE BLOCK (60h–D0h) Operation
ERASE operations are used to clear the contents of a block in the NAND Flash array to
prepare its pages for program operations.
The ERASE BLOCK (60h-D0h) command, when not preceded by the ERASE BLOCK
MULTI-PLANE (60h-D1h) command, erases one block in the NAND Flash array. When
the LUN is ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to verify that
this operation completed successfully.
The ERASE BLOCK MULTI-PLANE (60h-D1h) command can be used to improve erase
operation system performance by enabling multiple blocks to be erased in the NAND
Flash array. This is done by prepending one or more ERASE BLOCK MULTI-PLANE (60h-
D1h) commands in front of the ERASE BLOCK (60h-D0h) command. See “Multi-Plane
Operations” on page 86 for details.
The ERASE BLOCK (60h-D0h) command erases the specified block in the NAND Flash
array. This command is accepted by the LUN when it is ready (RDY = 1, ARDY = 1).
To erase a block, write 60h to the command register. Then write three address cycles
containing the row address; the page address is ignored. Conclude by writing D0h to the
command register. The selected LUN will go busy (RDY = 0, ARDY = 0) for
the block is erased.
To determine the progress of an ERASE operation, the host can monitor the target's R/B#
signal, or alternatively, the status operations (70h, 78h) can be used. When the LUN is
ready (RDY = 1, ARDY = 1) the host should check the status of the FAIL bit.
In devices that have more than one LUN per target, during and following multi-LUN
operations, the SELECT LUN WITH STATUS (78h) command must be used to select only
one LUN for status output. Use of the READ STATUS (70h) command could cause more
than one LUN to respond, resulting in bus contention.
The ERASE BLOCK (60h-D0h) command is used as the final command of a MULTI-
PLANE ERASE operation. It is preceded by one or more ERASE BLOCK MULTI-PLANE
(60h-D1h) commands. All of blocks in the addressed planes are erased. The host should
check the status of the operation by using the status operations (70h, 78h). See “Multi-
Plane Addressing” on page 86 for multi-plane addressing requirements.
I/O[7:0] (DQ[7:0])
Cycle type
SR[6]
Micron Confidential and Proprietary
Command
8Gb Asychronous/Synchronous NAND Flash Memory
60h
Address
76
R1
Address
Micron Technology, Inc., reserves the right to change products or specifications without notice.
R2
Address
R3
Command
D0h
Command Definitions
t WB
©2008 Micron Technology, Inc. All rights reserved.
t BERS
t
BERS while
Advance