MT48LC16M16A2BG-7E:DTR Micron Technology Inc, MT48LC16M16A2BG-7E:DTR Datasheet - Page 32
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MT48LC16M16A2BG-7E:DTR
Manufacturer Part Number
MT48LC16M16A2BG-7E:DTR
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC16M16A2BG-7EDTR.pdf
(87 pages)
Specifications of MT48LC16M16A2BG-7E:DTR
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
NO OPERATION (NOP)
LOAD MODE REGISTER (LMR)
ACTIVE
Figure 13: ACTIVE Command
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
The NO OPERATION (NOP) command is used to perform a NOP to the selected device
(CS# is LOW). This prevents unwanted commands from being registered during idle or
wait states. Operations already in progress are not affected.
The mode registers are loaded via inputs A[n:0] (where An is the most significant ad-
dress term), BA0, and BA1(see Mode Register (page 45)). The LOAD MODE REGISTER
command can only be issued when all banks are idle and a subsequent executable com-
mand cannot be issued until
The ACTIVE command is used to activate a row in a particular bank for a subsequent
access. The value on the BA0, BA1 inputs selects the bank, and the address provided
selects the row. This row remains active for accesses until a PRECHARGE command is
issued to that bank. A PRECHARGE command must be issued before opening a differ-
ent row in the same bank.
BA0, BA1
Address
RAS#
CAS#
WE#
CKE
CLK
CS#
HIGH
Bank address
Row address
t
32
MRD is met.
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 SDRAM
© 1999 Micron Technology, Inc. All rights reserved.
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