IS42S16100F-7BLI ISSI, Integrated Silicon Solution Inc, IS42S16100F-7BLI Datasheet

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IS42S16100F-7BLI

Manufacturer Part Number
IS42S16100F-7BLI
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS42S16100F-7BLI

Lead Free Status / Rohs Status
Compliant
IS42/45S16100F, IS42VS16100F
FEATURES
• Clock frequency:
• Fully synchronous; all signals referenced to a
• Two banks can be operated simultaneously and
• Dual internal bank controlled by A11
• Single power supply:
• LVTTL interface
• Programmable burst length
• Programmable burst sequence:
• 2048 refresh cycles every 32 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
• Burst termination by burst stop and
• Byte controlled by LDQM and UDQM
• Packages 400-mil 50-pin TSOP-II and 60-ball
• Lead-free package option
• Available in Industrial Temperature
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00C
06/03/2010
512K Words x 16 Bits x 2 Banks
16Mb SDRAM
IS42/45S16100F: 200, 166, 143 MHz
IS42VS16100F: 133, 100 MHz
positive clock edge
independently
(bank select)
IS42/45S16100F: V
IS42VS16100F: V
– (1, 2, 4, 8, full page)
Sequential/Interleave
operations capability
precharge command
BGA
dd
dd
/V
/V
ddq
ddq
= 1.8V
= 3.3V
DESCRIPTION
ISSI
IS45S16100F and IS42VS16100F are each organized
as a 524,288-word x 16-bit x 2-bank for improved
performance. The synchronous DRAMs achieve high-
speed data transfer using pipeline architecture. All
inputs and outputs signals refer to the rising edge of the
clock input.
ADDRESS TABLE
KEY TIMING PARAMETERS
Parameter
Power Supply V
Refresh Count
Row Addressing
Column Addressing
Bank Addressing
Precharge Addressing
Parameter
CLK Cycle Time
CAS Latency = 3
CAS Latency = 2
CLK Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from
Clock
CAS Latency = 3
CAS Latency = 2
Notes:
1. Available for IS42S16100F only
2. Available for IS42S16100F and IS45S16100F only
3. Available for IS42VS16100F only
’s 16Mb Synchronous DRAM IS42S16100F,
dd
/V
ddq
-5
200
100
10
5
5
6
(1)
PRELIMINARY INFORMATION
IS42/45S16100F
166
100
-6
5.5
10
6
6
(2)
2K/32ms
3.3V
-7
143
100
5.5
10
7
6
(2)
JUNE 2010
A0-A10
A0-A7
-75
133
100
A10
A11
7.5
10
6
8
(3)
IS42VS16100F
-10
2K/32ms
100
10
12
83
7
8
1.8V
(3)
Unit
Mhz
Mhz
ns
ns
ns
ns
1

Related parts for IS42S16100F-7BLI

IS42S16100F-7BLI Summary of contents

Page 1

... CAS Latency = 2 100 100 100 Access Time from Clock CAS Latency = 3 5 5.5 5.5 CAS Latency = Notes: 1. Available for IS42S16100F only 2. Available for IS42S16100F and IS45S16100F only 3. Available for IS42VS16100F only IS42VS16100F 1.8V 2K/32ms A0-A10 A0-A7 A11 A10 -75 -10 Unit (3) (3) 7.5 10 ...

Page 2

IS42/45S16100F, IS42VS16100F PIN CONFIGURATIONS 50-Pin TSOP (Type II) PIN DESCRIPTIONS A0-A11 Address Input A0-A10 Row Address Input A11 Bank Select Address A0-A7 Column Address Input DQ0 to DQ15 Data DQ CLK System Clock Input CKE Clock Enable Chip Select CS ...

Page 3

IS42/45S16100F, IS42VS16100F PIN CONFIGURATION PACKAGe CODe BALL TF-BGA (Top View) (10 6.4 mm Body, 0.65 mm Ball Pitch PIN DESCRIPTIONS A0-A10 ...

Page 4

... HIGH, disabled. The outputs go the HIGH impedance state when LDQM/UDQM is HIGH. This function corresponds conventional DRAMs. In write mode, LDQM and UDQM control the input buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is enabled, and data can be written to the device ...

Page 5

IS42/45S16100F, IS42VS16100F FUNCTIONAL BLOCK DIAGRAM CLK CKE COMMAND CS DECODER RAS CAS & WE CLOCK MODE A11 GENERATOR REGISTER 11 A10 SELF A9 REFRESH REFRESH A8 CONTROLLER CONTROLLER A7 A6 REFRESH A5 COUNTER ROW ADDRESS ...

Page 6

... IS42/45S16100F, IS42VS16100F IS42S16100F ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage dd max V Maximum Supply Voltage for Output Buffer ddq max V Input Voltage in V Output Voltage out P Allowable Power Dissipation d max I output Shorted Current cs T operating Temperature opr T Storage Temperature ...

Page 7

... IS42/45S16100F, IS42VS16100F IS42S16100F and IS45S16100F DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.) Symbol Parameter i Operating Current (1,2) cc1 i Precharge Standby Current cc2p (In Power-Down Mode) I Precharge Standby Current cc2ps (In Power-Down and Clock Suspend Mode) i Precharge Standby Current (3) cc2n (In Non Power-Down Mode) ...

Page 8

... IS42/45S16100F, IS42VS16100F IS42S16100F and IS45S16100F AC CHARACTERISTICS Symbol Parameter t 3 Clock Cycle Time Access Time From CLK ( CLK HIGH Level Width chi t CLK LOW Level Width Output Data Hold Time Output LOW Impedance Time Output HIGH Impedance Time hz ( Input Data Setup Time ...

Page 9

... IS42/45S16100F, IS42VS16100F IS42S16100F and IS45S16100F OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t CAS Latency cac t Active Command To Read/Write Command Delay Time rcd t RAS Latency ( rac rcd cac t Command Period (ReF to ReF / ACT to ACT Command Period (ACT to PRe) ...

Page 10

IS42/45S16100F, IS42VS16100F IS42VS16100F ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage dd max V Maximum Supply Voltage for Output Buffer ddq max V Input Voltage in V Output Voltage out P Allowable Power Dissipation d max I ...

Page 11

IS42/45S16100F, IS42VS16100F IS42VS16100F DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.) Symbol Parameter i Operating Current (1,2) cc1 i Precharge Standby Current cc2p (In Power-Down Mode) I Precharge Standby Current cc2ps (In Power-Down and Clock Suspend Mode) i Precharge ...

Page 12

IS42/45S16100F, IS42VS16100F IS42VS16100F AC CHARACTERISTICS Symbol Parameter t 3 Clock Cycle Time Access Time From CLK ( CLK HIGH Level Width chi t CLK LOW Level Width cl t ...

Page 13

IS42/45S16100F, IS42VS16100F IS42VS16100F OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t CAS Latency cac t Active Command To Read/Write Command Delay Time rcd t RAS Latency ( rac rcd cac ...

Page 14

IS42/45S16100F, IS42VS16100F COMMANDS Active Command CLK CKE HIGH CS RAS CAS WE A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 Write Command CLK HIGH CKE CS RAS CAS WE A0-A9 COLUMN AUTO PRECHARGE A10 NO PRECHARGE BANK 1 A11 ...

Page 15

IS42/45S16100F, IS42VS16100F COMMANDS (cont.) No-Operation Command CLK CKE HIGH CS RAS CAS WE A0-A9 A10 A11 Mode Register Set Command CLK HIGH CKE CS RAS CAS WE A0-A9 OP-CODE A10 OP-CODE A11 OP-CODE Integrated Silicon Solution, Inc. — www.issi.com Rev. ...

Page 16

IS42/45S16100F, IS42VS16100F COMMANDS (cont.) Self-Refresh Command CLK CKE CS RAS CAS WE A0-A9 A10 A11 Clock Suspend Command CLK CKE BANK(S) ACTIVE CS NOP RAS NOP CAS NOP WE NOP A0-A9 A10 A11 16 Power Down Command CLK CKE ALL ...

Page 17

... Active Command (CS, RAS = LOW, CAS, WE= HIGH) The SDRAM includes two banks of 2048 rows each. This command selects one of the two banks according to the A11 pin and activates the row selected by the pins A0 to A10. This command corresponds to the fall of the RAS signal from HIGH to LOW in conventional DRAMs ...

Page 18

IS42/45S16100F, IS42VS16100F Self-Refresh Command (CS, RAS, CAS, CKE = LOW HIGH) This command executes the self-refresh operation. The row address to be refreshed, the bank, and the refresh interval are generated automatically internally during this operation. The self-refresh ...

Page 19

IS42/45S16100F, IS42VS16100F COMMAND TRUTH TABLE (1,2) Symbol Command MRS Mode Register Set (3,4) REF Auto-Refresh (5) SREF Self-Refresh (5,6) PRE Precharge Selected Bank PALL Precharge Both Banks ACT Bank Activate (7) WRIT Write WRITA Write With Auto-Precharge READ Read (8) ...

Page 20

IS42/45S16100F, IS42VS16100F OPERATION COMMAND TABLE Current State Command Operation Idle DeSL No Operation or Power-Down NOP No Operation or Power-Down BST No Operation or Power-Down ReAD / ReADA Illegal WRIT/WRITA Illegal ACT Row Active PRe/PALL No Operation ReF/SeLF Auto-Refresh or ...

Page 21

IS42/45S16100F, IS42VS16100F OPERATION COMMAND TABLE Current State Command Operation Write With DeSL Burst Write Continues, Write Recovery And Precharge Auto-Precharge When Done NOP Burst Write Continues, Write Recovery And Precharge BST Illegal ReAD/ReADA Illegal WRIT/WRITA Illegal Illegal (10) ACT Illegal ...

Page 22

... This is possible depending on the state of the bank selected by the A11 pin. 11. Time to switch internal busses is required. 12. The SDRAM can be switched to power-down mode by dropping the CKe pin LOW when both banks in the idle state. Input pins other than CKE are ignored at this time. ...

Page 23

IS42/45S16100F, IS42VS16100F CKE RELATED COMMAND TRUTH TABLE Current State Operation Self-Refresh Undefined Self-Refresh Recovery Self-Refresh Recovery Illegal (2) Illegal (2) Maintain Self-Refresh Self-Refresh Recovery Idle State After t Idle State After t Illegal Illegal Power-Down on the Next Cycle Power-Down ...

Page 24

IS42/45S16100F, IS42VS16100F TWO BANKS OPERATION COMMAND TRUTH TABLE Operation CS RAS CAS WE A11 A10 A9-A0 DeSL NOP BST ReAD/ReADA WRIT/WRITA ACT ...

Page 25

IS42/45S16100F, IS42VS16100F SIMPLIFIED STATE TRANSITION DIAGRAM WRIT CKE_ CKE CLOCK WRITA SUSPEND CKE_ CKE POWER APPLIED Automatic transition following the completion of command execution. Transition due to command input. Integrated Silicon Solution, Inc. — www.issi.com Rev. 00C 06/03/2010 (One Bank ...

Page 26

... The device then automatically generates the following address. The burst length field in the mode register stipulates the number of data items input or output in sequence. In the SDRAM product, a burst length full page can be specified. See the table on the next page for details on setting the mode register ...

Page 27

IS42/45S16100F, IS42VS16100F MODE REGISTER A11 A10 WRITe MODe LT MODe M11 M10 Note: Other values for these bits are reserved. Integrated Silicon Solution, ...

Page 28

IS42/45S16100F, IS42VS16100F BURST LENGTH AND COLUMN ADDRESS SEQUENCE Column Address Burst Length ...

Page 29

IS42/45S16100F, IS42VS16100F BANK SELECT AND PRECHARGE ADDRESS ALLOCATION Row X0 — X1 — X2 — X3 — X4 — X5 — X6 — X7 — X8 — X9 — X10 — X11 0 1 Column Y0 — Y1 ...

Page 30

IS42/45S16100F, IS42VS16100F Burst Read The read cycle is started by executing the read command. The address provided during read command execution is used as the starting address. First, the data corresponding to this address is output in synchronization with the ...

Page 31

IS42/45S16100F, IS42VS16100F Read With Auto-Precharge The read with auto-precharge command first executes a burst read operation and then puts the selected bank in the precharged state automatically. After the precharge completes, the bank goes to the idle state. Thus this ...

Page 32

IS42/45S16100F, IS42VS16100F Write With Auto-Precharge The write with auto-precharge command first executes a burst write operation and then puts the selected bank in the precharged state automatically. After the precharge completes the bank goes to the idle state. Thus this ...

Page 33

IS42/45S16100F, IS42VS16100F Interval Between Read Command A new command can be executed while a read cycle is in progress, i.e., before that cycle completes. When the second read command is executed, after the CAS latency has elapsed, data corresponding to ...

Page 34

IS42/45S16100F, IS42VS16100F Interval Between Write and Read Commands A new read command can be executed while a write cycle is in progress, i.e., before that cycle completes. Data corresponding to the new read command is output after the CAS latency ...

Page 35

IS42/45S16100F, IS42VS16100F Interval Between Read and Write Commands A read command can be interrupted and a new write command executed while the read cycle is in progress, i.e., before that cycle completes. Data corresponding to the new write command can ...

Page 36

IS42/45S16100F, IS42VS16100F Precharge The precharge command sets the bank selected by pin A11 to the precharged state. This command can be executed at a time t following the execution of an active ras command to the same bank. The selected ...

Page 37

IS42/45S16100F, IS42VS16100F Write Cycle Interruption Using the Precharge Command A write cycle can be interrupted by the execution of the precharge command before that cycle completes. The delay time (t ) from the precharge command to the point wdl where ...

Page 38

... The SDRAM can output data continuously from the burst start address (a) to location a+255 during a read cycle in which the burst length is set to full page. The SDRAM repeats the operation starting at the 256th cycle with the data output returning to location (a) and continuing with a+1, a+2, a+3, etc ...

Page 39

... The SDRAM can input data continuously from the burst start address (a) to location a+255 during a write cycle in which the burst length is set to full page. The SDRAM repeats the operation starting at the 256th cycle with data input returning to location (a) and continuing with a+1, a+2, a+3, etc ...

Page 40

... CAS latency, as soon as one of the U/LDQM pins goes HIGH, the corresponding externally applied input data will no longer be written to the device internal circuits. Subsequently, the corresponding input continues to be muted as long as that U/LDQM pin remains HIGH. The SDRAM will revert to accepting input as soon as CLK COMMAND UDQM LDQM ...

Page 41

... CAS latency = 3 Clock Suspend When the CKe pin is dropped from HIGH to LOW during a read or write cycle, the SDRAM enters clock suspend mode on the next CLK rising edge. This command reduces the device power dissipation by stopping the device internal clock. Clock suspend mode continues as long as the CKE pin remains low ...

Page 42

IS42/45S16100F, IS42VS16100F OPERATION TIMING EXAMPLE Power-On Sequence, Mode Register Set Cycle CLK t CHI HIGH CKE RAS CAS t t ...

Page 43

IS42/45S16100F, IS42VS16100F Power-Down Mode Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 44

IS42/45S16100F, IS42VS16100F Auto-Refresh Cycle CLK t CHI CKS CK CL CKE RAS CAS A0- ...

Page 45

IS42/45S16100F, IS42VS16100F Self-Refresh Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ...

Page 46

IS42/45S16100F, IS42VS16100F Read Cycle CLK t CHI CKS CK CKE t CKA RAS CAS ...

Page 47

IS42/45S16100F, IS42VS16100F Read Cycle / Auto-Precharge CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 48

IS42/45S16100F, IS42VS16100F Read Cycle / Full Page CLK t CHI t t CKS CK CKE t CKA RAS CAS ...

Page 49

IS42/45S16100F, IS42VS16100F Read Cycle / Ping-Pong Operation (Bank Switching CLK t CHI t t CKS CKE t CKA RAS CAS t ...

Page 50

IS42/45S16100F, IS42VS16100F Write Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 51

IS42/45S16100F, IS42VS16100F Write Cycle / Auto-Precharge CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 52

IS42/45S16100F, IS42VS16100F Write Cycle / Full Page CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 53

IS42/45S16100F, IS42VS16100F Write Cycle / Ping-Pong Operation CLK t CHI t t CKS CKE t CKA RAS CAS ...

Page 54

IS42/45S16100F, IS42VS16100F Read Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 55

IS42/45S16100F, IS42VS16100F Read Cycle / Page Mode; Data Masking CLK t CHI CKS CK CKE t CKA RAS CAS t t ...

Page 56

IS42/45S16100F, IS42VS16100F Write Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 57

IS42/45S16100F, IS42VS16100F Write Cycle / Page Mode; Data Masking CLK t CHI t t CKS CK CKE t CKA RAS CAS ...

Page 58

IS42/45S16100F, IS42VS16100F Read Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 59

IS42/45S16100F, IS42VS16100F Write Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 60

IS42/45S16100F, IS42VS16100F Read Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 61

IS42/45S16100F, IS42VS16100F Write Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 62

IS42/45S16100F, IS42VS16100F Read Cycle / Byte Operation CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 63

IS42/45S16100F, IS42VS16100F Write Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 64

IS42/45S16100F, IS42VS16100F Read Cycle, Write Cycle / Burst Read, Single Write CLK t CHI CKS CL CK CKE t CKA RAS ...

Page 65

IS42/45S16100F, IS42VS16100F Read Cycle CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 66

IS42/45S16100F, IS42VS16100F Read Cycle / Auto-Precharge CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 67

IS42/45S16100F, IS42VS16100F Read Cycle / Full Page CLK t CHI CKS CL CK CKE t CKA RAS CAS t t ...

Page 68

IS42/45S16100F, IS42VS16100F Read Cycle / Ping Pong Operation (Bank Switching CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 69

IS42/45S16100F, IS42VS16100F Write Cycle CLK t CHI t t CKS CKE t CKA RAS CAS ...

Page 70

IS42/45S16100F, IS42VS16100F Write Cycle / Auto-Precharge CLK t CHI t t CKS CKE t CKA RAS CAS ...

Page 71

IS42/45S16100F, IS42VS16100F Write Cycle / Full Page CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 72

IS42/45S16100F, IS42VS16100F Write Cycle / Ping-Pong Operation (Bank Switching CLK t CHI CKS CK CL CKE t CKA RAS CAS t ...

Page 73

IS42/45S16100F, IS42VS16100F Read Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 74

IS42/45S16100F, IS42VS16100F Read Cycle / Page Mode; Data Masking CLK t CHI CKS CK CL CKE t CKA RAS CAS t ...

Page 75

IS42/45S16100F, IS42VS16100F Write Cycle / Page Mode CLK t CHI t t CKS CKE t CKA RAS CAS ...

Page 76

IS42/45S16100F, IS42VS16100F Write Cycle / Page Mode; Data Masking CLK t CHI t t CKS CKE t CKA RAS CAS ...

Page 77

IS42/45S16100F, IS42VS16100F Read Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 78

IS42/45S16100F, IS42VS16100F Write Cycle / Clock Suspend CLK t CHI CKS CK CL CKE t CKA RAS CAS ...

Page 79

IS42/45S16100F, IS42VS16100F Read Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS t t ...

Page 80

IS42/45S16100F, IS42VS16100F Write Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 81

IS42/45S16100F, IS42VS16100F Read Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 82

IS42/45S16100F, IS42VS16100F Write Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS ...

Page 83

IS42/45S16100F, IS42VS16100F Read Cycle, Write Cycle / Burst Read, Single Write CLK t CHI CKS CL CK CKE t CKA RAS ...

Page 84

... Speed (ns) 133MHz 100MHz 84 = 3.3V DD Order Part No. 5 IS42S16100F-5TL IS42S16100F-5BL 6 IS42S16100F-6TL IS42S16100F-6BL 7 IS42S16100F-7TL IS42S16100F-7BL Order Part No. 6 IS42S16100F-6TLI IS42S16100F-6BLI 7 IS42S16100F-7TLI IS42S16100F-7BLI Order Part No. 6 IS42S16100F-6TLA1 IS42S16100F-6BLA1 7 IS42S16100F-7TLA1 IS42S16100F-7BLA1 = 1.8V DD Order Part No. 7.5 IS42VS16100F-75TL IS42VS16100F-75BL 10 IS42VS16100F-10TL IS42VS16100F-10BL Order Part No. 7.5 IS42VS16100F-75TLI IS42VS16100F-75BLI 10 IS42VS16100F-10TLI IS42VS16100F-10BLI Integrated Silicon Solution, Inc. — ...

Page 85

IS42/45S16100F, IS42VS16100F Integrated Silicon Solution, Inc. — www.issi.com Rev. 00C 06/03/2010 85 ...

Page 86

IS42/45S16100F, IS42VS16100F 86 Integrated Silicon Solution, Inc. — www.issi.com Rev. 00C 06/03/2010 ...

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