MT48H8M32LFB5-75 L:G Micron Technology Inc, MT48H8M32LFB5-75 L:G Datasheet - Page 59
MT48H8M32LFB5-75 L:G
Manufacturer Part Number
MT48H8M32LFB5-75 L:G
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H8M32LFB5-75_LG.pdf
(86 pages)
Specifications of MT48H8M32LFB5-75 L:G
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
8/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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Figure 30: WRITE-to-PRECHARGE
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Note:
Fixed-length WRITE bursts can be truncated with the BURST TERMINATE command.
When truncating a WRITE burst, the input data applied coincident with the BURST TER-
MINATE command is ignored. The last data written (provided that DQM is LOW at that
time) will be the input data applied one clock previous to the BURST TERMINATE com-
mand. This is shown in Figure 31 (page 60), where data n is the last desired data
element of a longer burst.
t
t
Command
Command
WR @
WR @
1. In this example DQM could remain LOW if the WRITE burst is a fixed length of two.
Address
Address
DQM
DQM
CLK
t
t
DQ
DQ
CK
CK < 15ns
15ns
WRITE
Bank a,
WRITE
Bank a,
Col n
D
Col n
D
T0
IN
IN
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
NOP
NOP
D
D
T1
IN
IN
t
WR
59
PRECHARGE
(a or all)
Bank
NOP
T2
t
WR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
PRECHARGE
(a or all)
Bank
T3
NOP
t RP
NOP
NOP
T4
t RP
ACTIVE
Bank a,
NOP
Row
T5
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation
Bank a,
Don’t Care
ACTIVE
NOP
Row
T6
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