N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 129

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

9.2.22
Figure 66. Read Volatile Configuration Register instruction sequence DIO-SPI
Write Volatile Configuration Register
The Write Volatile Configuration register (WRVCR) instruction allows new values to be
written to the Volatile Configuration register. Before it can be accepted, a write enable
(WREN) instruction must have been executed previously. In case of Fast POR, the WREN
instruction is not required because a WREN instruction gets the device out from the Fast
POR state (See
Apart form the parallelizing of the instruction code and the input data on the two pins DQ0
and DQ1, the instruction functionality is exactly the same as the Write Volatile Configuration
Register (WVCR) instruction of the Extended SPI protocol, please refer to
Write Volatile Configuration Register
Figure 67. Write Volatile Configuration Register instruction sequence DIO-SPI
DQ0
DQ0
DQ1
DQ1
C
C
S
S
Section 11.1: Fast
0
0
Instruction
Instruction
1
1
2
2
POR).
3
3
for further details.
7
7
6
6
4
4
5
5
4
4
Volatile Configuration
Volatile Configuration
5
5
Byte
Byte
3
3
2
2
6
6
Register Out
Register In
1
1
0
0
7
7
7
7
6
6
8
8
5
5
4
4
9 10 11
9 10 11
Byte
Byte
Dual_Write_VCR
Dual_Read_VCR
3
3
2
2
1
1
0
0
Section 9.1.31:
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