STP7NM60N STMicroelectronics, STP7NM60N Datasheet - Page 5

• Manufacturer Part Number: STP7NM60N
• Description: POWER MOSFET
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP7NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 363pF @ 50V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 16472 Rev 4
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 5 A, V
= 5 A, di/dt = 100 A/µs
= 5 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, T
= 300 V, I
Figure
Figure
Test conditions
Test conditions
GS
22)
19)
j
D
GS
= 150 °C
= 0
= 2.5 A,
Figure
= 10 V
22)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
213
265
1.8
1.5
14
14
10
26
12
7
Max. Unit
Max
1.3
20
5
-
Unit
nC
nC
ns
ns
ns
ns
ns
ns
5/17
A
A
V
A
A