MPC8360EVVAJDGA Freescale Semiconductor, MPC8360EVVAJDGA Datasheet - Page 21
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MPC8360EVVAJDGA
Manufacturer Part Number
MPC8360EVVAJDGA
Description
IC MPU POWERQUICC II PRO 740TBGA
Manufacturer
Freescale Semiconductor
Series
PowerQUICC II PROr
Specifications of MPC8360EVVAJDGA
Processor Type
MPC83xx PowerQUICC II Pro 32-Bit
Speed
533MHz
Voltage
1.2V
Mounting Type
Surface Mount
Package / Case
740-TBGA
Processor Series
MPC8xxx
Core
e300
Data Bus Width
32 bit
Development Tools By Supplier
MPC8360E-RDK
Maximum Clock Frequency
533 MHz
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
I/o Voltage
1.8 V, 2.5 V, 3.3 V
Minimum Operating Temperature
0 C
Core Size
32 Bit
Program Memory Size
64KB
Cpu Speed
533MHz
Embedded Interface Type
I2C, SPI, USB, UART
Digital Ic Case Style
TBGA
No. Of Pins
740
Rohs Compliant
Yes
For Use With
MPC8360EA-MDS-PB - KIT APPLICATION DEV 8360 SYSTEMMPC8360E-RDK - BOARD REFERENCE DESIGN FOR MPC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPC8360EVVAJDGA
Manufacturer:
Freescale Semiconductor
Quantity:
135
Company:
Part Number:
MPC8360EVVAJDGA
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MPC8360EVVAJDGA
Manufacturer:
FREESCALE
Quantity:
20 000
Table 15
Table 16
device when GV
Freescale Semiconductor
Input current (0 V ≤V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
MV
Input current (0 V ≤V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. GV
on MV
MV
noise on MV
equal to MV
MPC8360E/MPC8358E PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 4
REF
TT
TT
DD
DD
REF
REF
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to equal
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
input leakage current
is expected to be within 50 mV of the DRAM GV
is expected to be within 50 mV of the DRAM GV
REF
. This rail should track variations in the DC level of MV
is expected to equal 0.5 × GV
is expected to be equal to 0.5 × GV
provides the DDR2 capacitance when GV
provides the recommended operating conditions for the DDR SDRAM component(s) of the
Table 14. DDR2 SDRAM DC Electrical Characteristics for GV
Parameter/Condition
cannot exceed ±2% of the DC value.
REF
REF
Parameter/Condition
. This rail should track variations in the DC level of MV
Parameter/Condition
Table 16. DDR SDRAM DC Electrical Characteristics for GV
may not exceed ±2% of the DC value.
DD
IN
IN
OUT
OUT
(typ) = 2.5 V.
≤ OV
≤ OV
= 0.35 V)
= 1.95 V)
DD
DD
Table 15. DDR2 SDRAM Capacitance for GV
)
)
DD
= 1.8 V ± 0.090 V, f = 1 MHz, T
DD
, and to track GV
DD
, and to track GV
Symbol
I
IN
Symbol
DD
DD
MV
GV
I
VREF
DD
V
I
V
I
V
I
I
OZ
OH
OL
at all times.
IN
at all times.
TT
≤
≤
REF
IH
IL
DD
DD
DC variations as measured at the receiver. Peak-to-peak noise
V
V
REF
Symbol
(typ) = 1.8 V.
OUT
OUT
DD
C
C
.
DIO
A
IO
DC variations as measured at the receiver. Peak-to-peak
Min
≤
≤
—
= 25°C, V
MV
MV
GV
GV
0.49 × GV
REF
REF
REF
DD
DD
2.375
–15.2
–0.3
15.2
Min
.
—
—
—
.
.
– 0.04
+ 0.18
OUT
Min
DD
DD
—
6
DD
(typ)=1.8 V
= GV
(typ) = 1.8 V (continued)
MV
MV
DD
0.51 × GV
DD
GV
Max
±10
/2, V
REF
REF
(typ) = 2.5 V
2.625
DD
Max
±10
±10
±10
—
—
Max
0.5
+ 0.04
+ 0.3
– 0.18
OUT
8
DD
(peak-to-peak) = 0.2 V.
DDR and DDR2 SDRAM
Unit
Unit
Unit
μA
mA
mA
pF
pF
μA
μA
μA
V
V
V
V
V
Notes
Notes
Notes
—
—
—
—
—
—
—
1
1
2
4
1
3
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