MPC8572EPXAVND Freescale Semiconductor, MPC8572EPXAVND Datasheet - Page 20

• Manufacturer Part Number: MPC8572EPXAVND
• Description: MPU POWERQUICC III 1023-PBGA
• Manufacturer: Freescale Semiconductor

Specifications of MPC8572EPXAVND

• Processor Type: MPC85xx PowerQUICC III 32-Bit
• Speed: 1.5GHz
• Voltage: 1.1V
• Mounting Type: Surface Mount
• Package / Case: 1023-FCPBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Features: -

DDR2 and DDR3 SDRAM Controller
Table 12
MPC8572E when interfacing to DDR3 SDRAM.
Table 13
Table 14
6.2
This section provides the AC electrical characteristics for the DDR SDRAM controller interface. The
DDR controller supports both DDR2 and DDR3 memories. Note that although the minimum data rate for
most off-the-shelf DDR3 DIMMs available is 800 MHz, JEDEC specification does allow the DDR3 to run
at the data rate as low as 606 MHz. Unless otherwise specified, the AC timing specifications described in
20
Current draw for MV
1. The voltage regulator for MV
I/O supply voltage
I/O reference voltage
Input high voltage
Input low voltage
Output leakage current
Notes:
1. GV
2. MV
3. Output leakage is measured with all outputs disabled, 0 V
Peak-to-peak noise on MV
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. GV
2. This parameter is sampled. GV
(peak-to-peak) = 0.2 V.
(peak-to-peak) = 0.175 V.
DD
REF
provides the recommended operating conditions for the DDR SDRAM controller of the
provides the DDR SDRAM controller interface capacitance for DDR2 and DDR3.
provides the current draw characteristics for MV
is expected to be within 50 mV of the DRAM GV
Table 13. DDR2 and DDR3 SDRAM Interface Capacitance for GV
DDR2 and DDR3 SDRAM Interface AC Electrical Characteristics
n is expected to be equal to 0.5 × GV
Parameter/Condition
Table 12. DDR3 SDRAM Interface DC Electrical Characteristics for GV
Parameter / Condition
Parameter/Condition
MPC8572E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
REF
n
REF
REF
Table 14. Current Draw Characteristics for MV
n may not exceed ±1% of the DC value.
n must be able to supply up to 1500 μA or 1250 uA current for DDR2 or DDR3, respectively.
DDR2 SDRAM
DDR3 SDRAM
DD
DD
= 1.8 V ± 0.090 V (for DDR2), f = 1 MHz, T
= 1.5 V ± 0.075 V (for DDR3), f = 1 MHz, T
DD
Symbol
MV
GV
, and to track GV
V
V
I
OZ
REF
IH
IL
DD
n
DD
Symbol
C
C
MV
I
at all times.
Symbol
≤
MVREF
DIO
IO
0.49 × GV
V
REF
OUT
1.425
GND
DD
Min
–50
n + 0.100
n
REF
≤
DC variations as measured at the receiver.
GV
n.
DD
DD
Min
—
6
.
Min
—
MV
A
A
0.51 × GV
REF
= 25°C, V
= 25°C, V
REF
DD
Typical
GV
1.575
Typical
n – 0.100
50
(typ)=1.8 V and 1.5 V
0.5
DD
n
8
1500
1250
Max
DD
DD
OUT
OUT
(typ) = 1.5 V
= GV
= GV
Freescale Semiconductor
Max
pF
pF
DD
DD
Unit
Max
μA
μA
V
V
V
V
/2, V
/2, V
OUT
OUT
Unit
1, 2
1, 2
Unit
Note
—
—
1
2
3
1