IRF710PBF Vishay PCS, IRF710PBF Datasheet - Page 3

• Manufacturer Part Number: IRF710PBF
• Description: 400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
• Manufacturer: Vishay PCS

Specifications of IRF710PBF

• Current, Drain: 2 A
• Fall Time: 11 ns
• Gate Charge, Total: 17 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 36 W
• Resistance, Drain To Source On: 3.6 Ohm
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Time, Rise: 8 ns
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 8 ns
• Transconductance, Forward: 4.5 S
• Voltage, Breakdown, Drain To Source: 400 V
• Voltage, Drain To Source: 400 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

IRF710, SiHF710
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Document Number: 91041
www.vishay.com
S-Pending-Rev. A, 30-May-08
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