IRF710PBF Vishay PCS, IRF710PBF Datasheet - Page 7

• Manufacturer Part Number: IRF710PBF
• Description: 400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
• Manufacturer: Vishay PCS

Specifications of IRF710PBF

• Current, Drain: 2 A
• Fall Time: 11 ns
• Gate Charge, Total: 17 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 36 W
• Resistance, Drain To Source On: 3.6 Ohm
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Time, Rise: 8 ns
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 8 ns
• Transconductance, Forward: 4.5 S
• Voltage, Breakdown, Drain To Source: 400 V
• Voltage, Drain To Source: 400 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91041.
Document Number: 91041
S-Pending-Rev. A, 30-May-08
Re-applied
voltage
Reverse
recovery
current
+
-
R
G
D.U.T
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level and 3 V drive devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
V
DD
IRF710, SiHF710
Vishay Siliconix
www.vishay.com
7