IRF710PBF Vishay PCS, IRF710PBF Datasheet - Page 6

• Manufacturer Part Number: IRF710PBF
• Description: 400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
• Manufacturer: Vishay PCS

Specifications of IRF710PBF

• Current, Drain: 2 A
• Fall Time: 11 ns
• Gate Charge, Total: 17 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 36 W
• Resistance, Drain To Source On: 3.6 Ohm
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Time, Rise: 8 ns
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 8 ns
• Transconductance, Forward: 4.5 S
• Voltage, Breakdown, Drain To Source: 400 V
• Voltage, Drain To Source: 400 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

IRF710, SiHF710
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S-Pending-Rev. A, 30-May-08
Document Number: 91041
D.U.T.
I
D
+
-
V
DS