IRF710PBF Vishay PCS, IRF710PBF Datasheet - Page 5

• Manufacturer Part Number: IRF710PBF
• Description: 400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
• Manufacturer: Vishay PCS

Specifications of IRF710PBF

• Current, Drain: 2 A
• Fall Time: 11 ns
• Gate Charge, Total: 17 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 36 W
• Resistance, Drain To Source On: 3.6 Ohm
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Time, Rise: 8 ns
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 8 ns
• Transconductance, Forward: 4.5 S
• Voltage, Breakdown, Drain To Source: 400 V
• Voltage, Drain To Source: 400 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Document Number: 91041
S-Pending-Rev. A, 30-May-08
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
AS
R
10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
0.01 Ω
L
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
DS
t
r
t
IRF710, SiHF710
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
V
+
-
www.vishay.com
DD
V
DD
5