SI1021R-T1-GE3 Siliconix / Vishay, SI1021R-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI1021R-T1-GE3
• Description: 60V (D-S) P-CH MOSFET W/ESD PROTECT
• Manufacturer: Siliconix / Vishay

Specifications of SI1021R-T1-GE3

• Channel Type: P
• Current, Drain: –190 A
• Gate Charge, Total: 1.7 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: SC-75A (SOT-416)
• Polarization: P-Channel
• Power Dissipation: 250 mW
• Resistance, Drain To Source On: 8 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Time, Turn-off Delay: 35 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 80 mS
• Voltage, Breakdown, Drain To Source: –60 V
• Voltage, Diode Forward: 80 V
• Voltage, Drain To Source: –60 V
• Voltage, Forward, Diode: 80 V
• Voltage, Gate To Source: ±20 V
• Low On-resistance: 4 Ω
• Low Threshold: –2 V (Typ.)
• Fast Switching Speed: 20 ns (Typ.)
• Low Input Capacitance: 20 pF (Typ.)
• Esd Protected: 2000 VApplications
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si1021R
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
I
C
I
t
V
GS(th)
D(on)
DS(on)
V
C
C
Q
Q
GSS
t
DSS
OFF
g
Q
ON
oss
DS
SD
rss
iss
fs
gs
gd
g
V
V
I
D
GS
DS
V
V
≅ - 200 mA, V
V
DS
DS
DS
= - 10 V, I
= - 30 V, V
V
V
V
V
= 0 V, V
V
V
= - 50 V, V
V
V
= - 25 V, V
V
V
GS
DS
DS
DS
V
GS
V
V
DS
DD
DS
DS
DS
DS
DS
GS
= - 10 V, I
= - 10 V, I
= - 200 mA, V
= V
= - 4.5 V, I
Test Conditions
= -10 V, V
= -10 V, V
= - 25 V, R
= 0 V, V
= 0 V, V
= - 50 V, V
= 0 V, I
= 0 V, V
D
GS
GS
GS
= - 500 mA, T
GEN
, I
GS
= ± 10 V, T
= - 15 V, I
GS
D
D
GS
GS
D
D
= - 10 V, R
= 0 V, T
GS
= - 0.25 mA
= 0 V, f = 1 MHz
GS
GS
D
= - 10 µA
= - 500 mA
= - 100 mA
L
GS
= - 25 mA
= ± 20 V
= ± 10 V
= ± 5 V
= 150 Ω,
= - 4.5 V
= - 10 V
GS
= 0 V
D
= 0 V
J
J
≅ - 500 mA
J
= 85 °C
= 85 °C
= 125 °C
G
= 10 Ω
- 600
Min.
- 60
- 50
- 1
80
80
Typ.
0.26
0.46
1.7
23
10
20
35
S-81543-Rev. D, 07-Jul-08
5
Document Number: 71410
± 200
± 500
± 100
- 250
Max.
- 3.0
± 10
- 25
8
4
6
Unit
mA
mS
nC
µA
nA
pF
ns
V
Ω
V