SI1021R-T1-GE3 Siliconix / Vishay, SI1021R-T1-GE3 Datasheet - Page 3
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SI1021R-T1-GE3
Manufacturer Part Number
SI1021R-T1-GE3
Description
60V (D-S) P-CH MOSFET W/ESD PROTECT
Manufacturer
Siliconix / Vishay
Datasheet
1.SI1021R-T1-GE3.pdf
(5 pages)
Specifications of SI1021R-T1-GE3
Channel Type
P
Current, Drain
–190 A
Gate Charge, Total
1.7 nC
Operating And Storage Temperature
–55 to +150 °C
Package Type
SC-75A (SOT-416)
Polarization
P-Channel
Power Dissipation
250 mW
Resistance, Drain To Source On
8 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–55 °C
Time, Turn-off Delay
35 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
80 mS
Voltage, Breakdown, Drain To Source
–60 V
Voltage, Diode Forward
80 V
Voltage, Drain To Source
–60 V
Voltage, Forward, Diode
80 V
Voltage, Gate To Source
±20 V
Low On-resistance
4 Ω
Low Threshold
–2 V (Typ.)
Fast Switching Speed
20 ns (Typ.)
Low Input Capacitance
20 pF (Typ.)
Esd Protected
2000 VApplications
Drivers
Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1021R-T1-GE3
Manufacturer:
Freescale
Quantity:
100
Part Number:
SI1021R-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS T
Document Number: 71410
S-81543-Rev. D, 07-Jul-08
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
15
12
8
4
0
9
6
3
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
0.3
= 500 mA
200
1
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
I
D
0.6
- Total Gate Charge (nC)
V
8 V
- Drain Current (mA)
Gate Charge
GS
V
400
GS
2
V
= 4.5 V
V
DS
= 5 V
GS
= 30 V
0.9
= 10 V
600
V
3
GS
1.2
A
= 10 V
= 25 °C, unless otherwise noted
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
0
8
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
2
GS
V
5
V
V
GS
Transfer Characteristics
T
DS
GS
0
= 10 V at 500 mA
J
= 0 V
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
10
4
T
J
50
Vishay Siliconix
= - 55 °C
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V at 25 mA
Si1021R
www.vishay.com
100
125 °C
20
8
25 °C
125
150
10
25
3