SI1021R-T1-GE3 Siliconix / Vishay, SI1021R-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI1021R-T1-GE3
• Description: 60V (D-S) P-CH MOSFET W/ESD PROTECT
• Manufacturer: Siliconix / Vishay

Specifications of SI1021R-T1-GE3

• Channel Type: P
• Current, Drain: –190 A
• Gate Charge, Total: 1.7 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: SC-75A (SOT-416)
• Polarization: P-Channel
• Power Dissipation: 250 mW
• Resistance, Drain To Source On: 8 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Time, Turn-off Delay: 35 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 80 mS
• Voltage, Breakdown, Drain To Source: –60 V
• Voltage, Diode Forward: 80 V
• Voltage, Drain To Source: –60 V
• Voltage, Forward, Diode: 80 V
• Voltage, Gate To Source: ±20 V
• Low On-resistance: 4 Ω
• Low Threshold: –2 V (Typ.)
• Fast Switching Speed: 20 ns (Typ.)
• Low Input Capacitance: 20 pF (Typ.)
• Esd Protected: 2000 VApplications
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si1021R
Vishay Siliconix
TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
1000
- 0.0
- 0.1
- 0.2
- 0.3
100
0.5
0.4
0.3
0.2
0.1
10
1
0.01
0.00
- 50
0.1
Threshold Voltage Variance Over Temperature
2
1
http://www.vishay.com/ppg?71410.
10
V
- 25
-4
Source-Drain Diode Forward Voltage
GS
T
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
J
= 0 V
0.3
= 125 °C
V
SD
T
0
I
J
D
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
= 250 µA
25
0.6
10
Single Pulse
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
0.9
J
75
T
= - 55 °C
J
= 25 °C
A
100
10
= 25 °C, unless otherwise noted
1.2
-2
125
1.5
150
Square Wave Pulse Duration (s)
10
-1
2.5
1.5
0.5
10
8
6
4
2
0
3
2
1
0
0.01
1
0
On-Resistance vs. Gate-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
2
V
GS
I
D
- Gate-to-Source Voltage (V)
= 200 mA
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
4
1
JM
- T
Time (s)
t
A
1
T
= P
A
t
S-81543-Rev. D, 07-Jul-08
2
Document Number: 71410
= 25 °C
DM
6
Z
10
thJA
thJA
100
I
t
t
1
2
D
(t)
= 500 mA
= 500 °C/W
8
100
6
0
0
600
10