DG308BDY-E3 Siliconix / Vishay, DG308BDY-E3 Datasheet

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DG308BDY-E3

Manufacturer Part Number
DG308BDY-E3
Description
QUAD SPST ANALOG SWITCH
Manufacturer
Siliconix / Vishay
Type
4-Channelr
Datasheet
1.DG308BDY-E3.pdf (10 pages)

Specifications of DG308BDY-E3

Charge Injection
1 pC
Current, Source, Off-state
0.50 nA
Number Of Channels
4
Package
16-Pin SOIC N
Package Type
16-Pin SOIC N
Primary Type
Analog
Resistance, Drain To Source On
85 Ohms
Switch Type
SPST
Time, Turn-on
200 ns
Voltage, Supply
44
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
DESCRIPTION
The DG308B/309B analog switches are highly improved
versions of the industry-standard DG308A/309. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG308B and DG309B
can handle up to ± 22 V input signals. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG308B is a normally open switch and the DG309B is
a normally closed switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
GND
IN
IN
D
V-
D
S
S
1
1
1
4
4
4
Dual-In-Line, SOIC and TSSOP
1
2
3
4
5
6
7
8
Improved Quad CMOS Analog Switches
DG308B
Top View
16
15
14
13
12
10
11
9
IN
D
S
V+
NC
S
D
IN
2
3
2
3
2
3
FEATURES
BENEFITS
APPLICATIONS
Logic "0" ≤ 3.5 V
Logic "1" ≥ 11 V
• ± 22 V Supply Voltage Rating
• CMOS Compatible Logic
• Low On-Resistance - r
• Low Leakage - I
• Single Supply Operation Possible
• Extended Temperature Range
• Fast Switching - t
• Low Glitching - Q: 1 pC
• Wide Analog Signal Range
• Simple Logic Interface
• Higher Accuracy
• Minimum Transients
• Reduced Power Consumption
• Superior to DG308A/309
• Space Savings (TSSOP)
• Industrial Instrumentation
• Test Equipment
• Communications Systems
• Disk Drives
• Computer Peripherals
• Portable Instruments
• Sample-and-Hold Circuits
TRUTH TABLE
Logic
0
1
D(on)
ON
: < 200 ns
: 20 pA
DG308B
DS(on)
OFF
ON
: 45 Ω
DG308B/309B
Vishay Siliconix
www.vishay.com
DG309B
OFF
ON
RoHS*
COMPLIANT
Available
Pb-free
1

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DG308BDY-E3 Summary of contents

Page 1

Improved Quad CMOS Analog Switches DESCRIPTION The DG308B/309B analog switches are highly improved versions of the industry-standard DG308A/309. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower ...

Page 2

... Derate 12 mW/°C above 75 °C. www.vishay.com 2 Package 16-Pin PlasticDIP 16-Pin Narrow SOIC 16-Pin TSSOP 30 mA, whichever occurs first Part Number DG308BDJ DG308BDJ-E3 DG309BDJ DG309BDJ-E3 DG308BDY DG308BDY-E3 DG308BDY-T1 DG308BDY-T1-E3 DG309BDY DG309BDY-E3 DG309BDY-T1 DG309BDY-T1-E3 DG308BDQ DG308BDQ-E3 DG308BDQ-T1 DG308BDQ-T1-E3 DG309BDQ DG309BDQ-E3 DG309BDQ-T1 DG309BDQ-T1-E3 Limit Unit ...

Page 3

SPECIFICATIONS Parameter Symbol Analog Switch e V Analog Signal Range ANALOG Drain-Source r DS(on) On-Resistance Δr r Match DS(on) DS(on) I Source Off Leakage Current S(off) I Drain Off Leakage Current D(off) I Drain On Leakage Current D(on) Digital ...

Page 4

DG308B/309B Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY Parameter Symbol Analog Switch e V Analog Signal Range ANALOG Drain-Source r DS(on) On-Resistance Dynamic Characteristics t Turn-On Time ON t Turn-Off Time OFF Charge Injection Q Power Supply Positive Supply Current I+ ...

Page 5

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 11 0 100 – Drain V oltage ( vs. V ...

Page 6

DG308B/309B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SCHEMATIC DIAGRAM (TYPICAL CHANNEL GND V– www.vishay.com 6 120 110 100 Ω ...

Page 7

TEST CIRCUITS + GND Ω ...

Page 8

DG308B/309B Vishay Siliconix APPLICATIONS + IN1 V IN2 DG419 CH GND Gain Gain = Gain 2 (x 10) R ...

Page 9

APPLICATIONS C 4 150 Select C 3 1500 Select C 2 TTL Control 0.015 μ Select C 1 0.15 µ Select ...

Page 10

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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