DG308BDY-E3 Siliconix / Vishay, DG308BDY-E3 Datasheet - Page 5

• Manufacturer Part Number: DG308BDY-E3
• Description: QUAD SPST ANALOG SWITCH
• Manufacturer: Siliconix / Vishay
• Type: 4-Channelr

Specifications of DG308BDY-E3

• Charge Injection: 1 pC
• Current, Source, Off-state: 0.50 nA
• Number Of Channels: 4
• Package: 16-Pin SOIC N
• Package Type: 16-Pin SOIC N
• Primary Type: Analog
• Resistance, Drain To Source On: 85 Ohms
• Switch Type: SPST
• Time, Turn-on: 200 ns
• Voltage, Supply: 44
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
100 pA
10 pA
1 nA
1 pA
100
11 0
250
225
200
175
150
125
100
90
80
70
60
50
40
30
20
10
75
50
25
- 55
0
r
- 20 - 16 - 12 - 8
DS(on)
0
I
r
S( of f)
V+ = 15 V
V- = - 15 V
V
DS(on)
- 35
S,
Leakage Currents vs. Temperature
2
vs. V
V
, I
D
D(of f)
= ± 14 V
- 15
vs. V
D
4
and Single Power Supply Voltages
D
V
V
5
D
D
Temperature (°C)
and Power Supply Voltages
6
– Drain V oltage (V)
– Drain Voltage (V)
V+ = 5 V
- 4
7 V
25
8
0
10 V
45
4
10
65
12 V
± 5 V
± 10 V
8
12
85
1 2
± 15 V
14
105 125
1 6
15 V
2 0
16
- 10
- 20
- 30
100
- 10
- 20
- 30
- 40
30
20
10
90
80
70
60
50
40
30
20
10
40
30
20
10
0
0
0
- 15
- 15
- 20
Q
S
V+ = 15 V
V- = - 15 V
, Q
V+ = 15 V
V- = - 15 V
V+ = 22 V
V- = - 22 V
T
- 15
Leakage Currents vs. Analog Voltage
A
- 10
D
- 10
= 25 °C
r
– Charge Injection vs. Analog Voltage
DS(on)
- 10
- 5
- 5
V
vs. V
Analog Voltage (V)
D
- 5
Analog V oltage
– Drain V oltage (V)
D
25 °C
- 55 °C
125 °C
DG308B/309B
85 °C
and Temperature
0
0
0
Vishay Siliconix
I
D(on)
5
V+ = 12 V
V- = 0 V
5
5
I
S( of f)
www.vishay.com
10
, I
D(of f)
10
10
15
15
15
20
5