DG308BDY-E3 Siliconix / Vishay, DG308BDY-E3 Datasheet - Page 7

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DG308BDY-E3

Manufacturer Part Number
DG308BDY-E3
Description
QUAD SPST ANALOG SWITCH
Manufacturer
Siliconix / Vishay
Type
4-Channelr
Datasheet

Specifications of DG308BDY-E3

Charge Injection
1 pC
Current, Source, Off-state
0.50 nA
Number Of Channels
4
Package
16-Pin SOIC N
Package Type
16-Pin SOIC N
Primary Type
Analog
Resistance, Drain To Source On
85 Ohms
Switch Type
SPST
Time, Turn-on
200 ns
Voltage, Supply
44
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
TEST CIRCUITS
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
V
S
= + 3 V
V
12 V
g
V
Of f Isolation = 20 log
S
R
g
12 V
= 50
0 V, 15 V
R
g
Ω
S
IN
GND
Figure 3. Off Isolation
S
IN
V
V
C
GND
V+
S
O
IN
S
GND
+ 15 V
- 15 V
V-
V+
V
O
+ 15 V
D
+ 15 V
= V
V+
- 15 V
- 15 V
S
V-
V-
D
D
R
R
1 kΩ
L
L
+ r
C
R
DS(on)
L
Figure 5. Charge Injection
C
1000 pF
Figure 2. Switching Time
L
C
35 pF
50
V
L
O
Ω
V
V
O
O
X
C = RF bypass
Output
Switch
TA LK
Logic
Input
V
Isolation = 20 log
S
12 V
V
R
0 V
O
g
Figure 4. Channel-to-Channel Crosstalk
ΔV
The charge injection in coulombs is Q = C
= 50 Ω
O
0 V, 15 V
0 V, 15 V
= measured voltage error due to charge injection
V
IN
NC
O
X
t
ON
V
V
C
50 %
O
ON
S
S
IN
S
IN
1
2
1
2
GND
90 %
DG308B/309B
V+
Vishay Siliconix
ΔV
OFF
+ 15 V
t
OFF
O
- 15 V
V-
t
t
r
f
< 20 ns
< 20 ns
D
D
L
1
2
x ΔV
www.vishay.com
C
ON
O
50 Ω
V
50 Ω
O
7

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