SI5903DC-T1-E3 Siliconix / Vishay, SI5903DC-T1-E3 Datasheet

Page 1

... GS 1206-8 ChipFETt Bottom View Ordering Information: Si5903DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5903DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... J 1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Document Number: 71054 S-21251—Rev. B, 05-Aug- 4 2.0 2.5 3 25_C J 1.0 1.2 1.4 Si5903DC Vishay Siliconix Capacitance 600 500 C iss 400 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4.5 V ...

Page 4

... Si5903DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 --0.1 --0.2 --50 -- Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...