SI5903DC-T1-E3 Siliconix / Vishay, SI5903DC-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5903DC-T1-E3
• Description: DUAL P-CH 2.5V (G-S) RATED MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI5903DC-T1-E3

• Channel Type: P
• Current, Drain: ±2.9 A
• Fall Time: 40 ns
• Gate Charge, Total: 6 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: 1206-8 ChipFET®
• Polarization: P-Channel
• Power Dissipation: 1.1 W
• Resistance, Drain To Source On: 0.155 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 60 °C/W
• Time, Rise: 55 ns
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 55 ns
• Transconductance, Forward: 5 S
• Voltage, Breakdown, Drain To Source: –20 V
• Voltage, Diode Forward: –1.2 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: –1.2 V
• Voltage, Gate To Source: ±12 V
• Trenchfet® Power Mosfet: 2.5 V Rated
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

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All product specifications and data are subject to change without notice.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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