SI5903DC-T1-E3 Siliconix / Vishay, SI5903DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5903DC-T1-E3
• Description: DUAL P-CH 2.5V (G-S) RATED MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI5903DC-T1-E3

• Channel Type: P
• Current, Drain: ±2.9 A
• Fall Time: 40 ns
• Gate Charge, Total: 6 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: 1206-8 ChipFET®
• Polarization: P-Channel
• Power Dissipation: 1.1 W
• Resistance, Drain To Source On: 0.155 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 60 °C/W
• Time, Rise: 55 ns
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 55 ns
• Transconductance, Forward: 5 S
• Voltage, Breakdown, Drain To Source: –20 V
• Voltage, Diode Forward: –1.2 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: –1.2 V
• Voltage, Gate To Source: ±12 V
• Trenchfet® Power Mosfet: 2.5 V Rated
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

www.vishay.com
2-4
Si5903DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
--0.1
--0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.01
0.1
0.1
--50
2
1
2
1
10
10
- -4
- -4
--25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
Single Pulse
-- Temperature (_C)
25
10
- -3
50
10
I
- -3
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
- -2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
- -2
10
- -1
10
1
- -1
50
40
30
20
10
0
10
- -4
10
- -3
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
Single Pulse Power
JM
- -2
- - T
t
1
A
Time (sec)
1
10
= P
t
- -1
2
DM
Z
thJA
thJA
100
S-21251—Rev. B, 05-Aug-02
t
t
1
2
1
(t)
Document Number: 71054
= 90_C/W
10
600
10
100
600