DS1248Y-70+ Dallas Semiconductor, DS1248Y-70+ Datasheet - Page 7

• Manufacturer Part Number: DS1248Y-70+
• Description: PHNTHM RTC MOD 128K X 8 70NS
• Manufacturer: Dallas Semiconductor

Specifications of DS1248Y-70+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 85 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 1024K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 128K×8
• Package Type: EDIP
• Temperature, Operating: 0 to +70 °C
• Time, Access: 70 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5.3 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

POWER-DOWN/POWER-UP TIMING
Over the Operating Range (3.3V)
CE at V
V
V
V
V
CE at V
(T
Expected Data-Retention Time
Warning: Under no circumstances are negative undershoots, of any amplitude, allowed when
device is in battery-backup mode.
MEMORY READ CYCLE (Note 1)
CC
PF(MIN)
CC
PF(MIN)
A
= +25°C)
Slew from V
Slew from V
(CE at V
(CE at V
IH
IH
before Power-Down
after Power-Up
PARAMETER
PARAMETER
IH
IH
PF(MAX)
PF(MAX)
)
)
to
to
SYMBOL
SYMBOL
t
t
t
REC
t
t
DR
PD
R
F
13 of 18
MIN
MIN
300
1.5
10
0
0
TYP
TYP
MAX
MAX
2.5
UNITS
UNITS
years
ms
ms
ms
ms
NOTES
NOTES
9