BUK7Y08-40B NXP Semiconductors, BUK7Y08-40B Datasheet - Page 7

• Manufacturer Part Number: BUK7Y08-40B
• Description: MOSFET, N CH, 40V, 75A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7Y08-40B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

NXP Semiconductors
BUK7Y08-40B
Product data sheet
Fig 6.
Fig 8.
(A)
(A)
I
I
D
80
60
40
20
D
80
60
40
20
0
0
function of drain-source voltage; typical values.
function of gate-source voltage; typical values.
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
20
10
1
2
T
j
= 175 °C
2
4
3
25 °C
V
6
GS
All information provided in this document is subject to legal disclaimers.
4
V
003aad499
(V) =
003aad551
V
GS
DS
(V)
5.8
5.2
6.1
5.6
4.8
4.5
(V)
5
8
Rev. 03 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
g
(S )
DSon
fs
30
24
18
12
56
44
32
20
6
0
of drain current; typical values.
drain current; typical values.
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS standard level FET
V
GS
(V) =
20
20
5.2
BUK7Y08-40B
40
40
5.6
5.8
60
60
© NXP B.V. 2010. All rights reserved.
I
003aad500
003aad501
I
D
D
6.1
(A)
(A)
10
20
80
80
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