BUK9Y09-40B NXP Semiconductors, BUK9Y09-40B Datasheet - Page 5

• Manufacturer Part Number: BUK9Y09-40B
• Description: MOSFET, N CH, 40V, 75A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y09-40B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.0058ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.65V
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9Y09-40B
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
I
(K/W)
th (j-mb)
D
(A)
10
10
10
10
10
10
10
10
-1
-1
-2
-3
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
-1
-6
Thermal characteristics
0.1
0.05
δ = 0.5
0.2
0.02
single shot
Parameter
thermal resistance
from junction to
mounting base
10
-5
Limit R
DSon
1
= V
DS
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
/ I
D
-4
Figure 5
Rev. 04 — 7 April 2010
DC
10
10
-3
10
N-channel TrenchMOS logic level FET
-2
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
10
2
BUK9Y09-40B
Min
-
10
P
-1
V
DS
t
Typ
-
p
(V)
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aac606
003aac479
δ =
Max
1.42
t
T
p
t
10
1
3
Unit
K/W
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