BUK9Y58-75B NXP Semiconductors, BUK9Y58-75B Datasheet - Page 9

• Manufacturer Part Number: BUK9Y58-75B
• Description: MOSFET, N CH, 75V, 20.73A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y58-75B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20.73A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 0.047ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.65V
• Rohs Compliant: Yes

NXP Semiconductors
BUK9Y58-75B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
5
4
3
2
1
0
charge; typical values.
0
V
DS
= 14 V
4
(A)
8
I
S
100
80
60
40
20
V
0
0.2
DS
All information provided in this document is subject to legal disclaimers.
Q
003aac975
= 60 V
G
(nC)
12
Rev. 04 — 7 April 2010
T
j
= 175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
1
C
10
10
10
10
4
3
2
T
10
as a function of drain-source voltage; typical
values.
j
= 25 °C
-1
003aac971
V
SD
(V)
N-channel TrenchMOS logic level FET
1.4
1
BUK9Y58-75B
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aac968
C
C
C
(V)
oss
rss
iss
10
2
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