MT49H64M9CHU-25E:A Micron Technology Inc, MT49H64M9CHU-25E:A Datasheet - Page 63
MT49H64M9CHU-25E:A
Manufacturer Part Number
MT49H64M9CHU-25E:A
Description
Manufacturer
Micron Technology Inc
Type
RLDRAMr
Datasheet
1.MT49H64M9CHU-25EA.pdf
(74 pages)
Specifications of MT49H64M9CHU-25E:A
Organization
64Mx9
Address Bus
25b
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
675mA
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
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Figure 40:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
576Mb_RLDRAM_II_SIO_Core2.fm - Rev. F 6/09 EN
COMMAND
ADDRESS
BANK
QVLD
QK#
CK#
QK
CK
Consecutive READ Burst with Multiplexed Addressing
Q
Notes:
Bank a
READ
T0
Ax
1. DO a = data-out from bank a.
2. Nominal conditions are assumed for specifications not defined.
3. BL = 4.
4. Three subsequent elements of the burst appear following DO a.
5. Example applies only when READ commands are issued to the same device.
6. Bank address can be to any bank, but the subsequent READ can only be to the same bank if
7. Data from the READ commands to banks b through bank d will appear on subsequent clock
t
cycles (not shown).
RC has been met.
NOP
Ay
T1
RL = 5
576Mb: x9, x18 2.5V Vext, 1.8V Vdd, HSTL, SIO, RLDRAM II
Bank b
READ
T2
Ax
63
T3
NOP
Ay
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank c
READ
T4
Ax
TRANSITIONING DATA
T5
NOP
Ay
DO
©2004 Micron Technology, Inc. All rights reserved.
a
T5n
Bank d
DON’T CARE
T6
READ
Ax
Operations
T6n
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