TLP250(INV) Toshiba, TLP250(INV) Datasheet
TLP250(INV)
Specifications of TLP250(INV)
Related parts for TLP250(INV)
TLP250(INV) Summary of contents
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... Inverters for Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP. TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET. Input Threshold Current : I =5mA(max) F Supply Current(ICC) ...
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... I ≤+1.0A (≤2.5μs) OPH OPL Symbol Min Typ (ON — F (OFF — — — OPH OPL T − opr 2 TLP250(INV) Symbol Rating Unit ∆I /∆Ta −0.36 mA /° FPT 125 °C −1 OPH −2.0 +1 OPL +2.0 35 ...
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... FLH EE1 R = 200Ω — +15 V CC1 −15 V FHL EE1 R = 200Ω — — MHz 25° 500 25° — S R.H.≤60% 3 TLP250(INV) Min Typ. Max 1.6 1.8 — −2.0 — — 10 — 45 250 — −1.0 −1 8− 1 2.5 V 6− — ...
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... 25° 1000 25°C CC Fig.2 I OPH 1 ↑ 6-5 Fig CC1 EE1 4 TLP250(INV) Min Typ. Max 0.05 0.15 0.5 0.05 0.15 0.5 — — 0.45 = 10nF L — — — — −15000 — — 15000 — — Test Circuit 8 0.1μ OPH Test Circuit 8 0.1μ ...
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... CM Test Circuit 90% 10 A(IF=8mA B(IF=0mA) CML(CMH) is the maximum rate of rise(fall) of the common mode voltage that can be sustained with the output voltage in the low(high)state. IF 0.1μ tpLH 8 V 0.1μ 1000V 26V TLP250(INV tpHL 800( (μs) f 800( (μs) r 2007-10-01 90% 50% 10% ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TLP250(INV) 2007-10-01 ...