TLP250(INV,F) Toshiba, TLP250(INV,F) Datasheet
TLP250(INV,F)
Specifications of TLP250(INV,F)
Related parts for TLP250(INV,F)
TLP250(INV,F) Summary of contents
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... Transistor Inverter Inverters for Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP. TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET. Input Threshold Current ...
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Electrical Characteristics Characteristics Input Forward Voltage Temperature Coefficient of Forward Voltage Input Reverse Current Input Capacitance “H” Level Output Current “L” Level “H” Level Output Voltage “L” Level “H” Level Supply Current “L” Level Threshold Input L→H Current Threshold Input ...
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Switching Characteristics Characteristics Propagation L→H Delay Time H→L Switching Time Dispersion between ON and OFF Output Rise Time Output Fall Time Common Mode Transient Immunity at High Level Output Common Mode Transient Immunity at Low Level Output Fig.1 I Test ...
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Fig.5 t pLH , t pHL , Test Circuit Fig Test Circuit 90% 10% t ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...