MT8JSF25664HZ-1G4D1 Micron Technology Inc, MT8JSF25664HZ-1G4D1 Datasheet - Page 9

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MT8JSF25664HZ-1G4D1

Manufacturer Part Number
MT8JSF25664HZ-1G4D1
Description
MICMT8JSF25664HZ-1G4D1 2GB DDR3 MODULE
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT8JSF25664HZ-1G4D1

Main Category
DRAM Module
Sub-category
DDR3 SDRAM
Module Type
204SODIMM
Device Core Size
64b
Organization
256Mx64
Total Density
2GByte
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Operating Current
1.92A
Number Of Elements
8
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
204
Mounting
Socket
Memory Type
DDR3 SDRAM
Memory Size
2GB
Speed
1333MT/s
Features
-
Package / Case
204-SODIMM
Lead Free Status / Rohs Status
Compliant
Electrical Specifications
Table 8: Absolute Maximum Ratings
Table 9: Operating Conditions
PDF: 09005aef83364a85
jsf8c128_256x64hz.pdf - Rev. C 1/10 EN
Symbol Parameter
I
V
I
V
VREF
I
VTT
T
T
OZ
DD
I
V
TT
Symbol
I
A
C
IN
V
, V
DD
OUT
V
Termination reference current from V
Termination reference voltage (DC) –
command/address bus
Input leakage current;
Any input 0V ≤ V
V
V
0.95V (All other pins
not under test = 0V)
Output leakage current;
0V ≤ V
DQ and ODT are
disabled; ODT is HIGH
V
V
(All other pins not under test = 0V)
Module ambient
operating temperature
DDR3 SDRAM compo-
nent case operating
temperature
DD
DD
REF
REF
REF
;
DQ = V
supply voltage
input 0V ≤ V
supply leakage current;
OUT
Parameter
V
Voltage on any pin relative to V
DD
≤ V
Notes:
DD
supply voltage relative to V
/2 or V
DD
;
IN
IN
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device’s data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1GB, 2GB (x64, SR) 204-Pin Halogen-Free DDR3 SDRAM SODIMM
1. V
2. T
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
4. The refresh rate is required to double when 85°C < T
REFCA
and address signals’ voltage margin and will reduce timing margins.
available on Micron’s Web site.
A
TT
Address in-
puts, RAS#,
CAS#, WE#,
S#, CKE, ODT,
BA, CK, CK#
DM
DQ, DQS,
DQS#
Commercial
Industrial
Commercial
Industrial
= V
and T
termination voltage in excess of the stated limit will adversely affect the command
DD
/2
C
are simultaneous requirements.
TT
SS
SS
0.49 × V
1.425
–600
Min
–16
–40
–40
–2
–5
–8
DD
9
0
0
- 20mV
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
–0.4
–0.4
0.5 × V
Nom
1.5
0
0
0
0
DD
0.51 × V
C
Electrical Specifications
≤ 95°C.
+1.975
+1.975
Max
1.575
+600
Max
+16
+70
+85
+95
+95
DD
+2
+5
+8
© 2010 Micron Technology, Inc. All rights reserved.
+ 20mV
Units
mA
µA
µA
µA
°C
°C
°C
°C
V
V
Units
V
V
Notes
2, 3, 4
2, 3
1

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