VN3205N6 Supertex, VN3205N6 Datasheet - Page 4

• Manufacturer Part Number: VN3205N6
• Description: MOSFET Power 50V 0.3Ohm
• Manufacturer: Supertex

Specifications of VN3205N6

• Configuration: Quad
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: PDIP-14
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: In Transition

Typical Performance Curves
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400
300
200
100
1.1
1.0
0.9
10
0
8
6
4
2
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
2
Transfer Characteristics
10
0
= 25V
Variation with Temperature
f = 1MHz
V
V
GS
4
DS
T
(volts)
j
50
20
° (
(volts)
C)
C
6
C
RSS
ISS
100
30
8
150
10
40
4
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
0.8
0.7
10
V
0
8
6
4
2
0
GS(th)
-50
0
0
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
V
215 pF
DS
4
1
= 10V
V
0
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GS
Q (nanocoulombs)
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DS(ON)
G
I
= 4.5V
D
R
8
(amperes)
2
DS(ON)
Variation with Temperature
T
j
50
(°C)
V
GS(th)
V
@ 10V, 3A
12
GS
3
V
325 pF
= 10V
@ 1mA
DS
100
= 40V
16
4
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150
20
5
1.6
1.4
1.2
1.0
0.8
0.6
VN3205
11/12/01