PSMN1R2-25YLC,115 NXP Semiconductors, PSMN1R2-25YLC,115 Datasheet - Page 8
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PSMN1R2-25YLC,115
Manufacturer Part Number
PSMN1R2-25YLC,115
Description
MOSFET Power N-Ch 25V 1.3 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN1R2-25YLC115.pdf
(15 pages)
Specifications of PSMN1R2-25YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.3 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
179 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
66 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
4173pF @ 12V
Power - Max
179W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065197115
NXP Semiconductors
PSMN1R2-25YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S )
(A)
g
I
10
10
10
10
10
10
250
200
150
100
D
fs
50
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
Min
1
40
Typ
60
Max
2
N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower
80
V
All information provided in this document is subject to legal disclaimers.
003a a f 701
003a a f 700
GS
I
D
(V)
(A)
100
3
Rev. 1 — 2 May 2011
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS (th)
(V)
(A)
I
D
100
2.5
1.5
0.5
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
T
j
0
1
PSMN1R2-25YLC
= 150 °C
I
D
= 1mA
60
2
T
j
5mA
= 25 °C
120
3
© NXP B.V. 2011. All rights reserved.
V
003a a f 703
003a a f 699
GS
T
j
(°C)
(V)
180
4
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