PSMN1R7-25YLC,115 NXP Semiconductors, PSMN1R7-25YLC,115 Datasheet
PSMN1R7-25YLC,115
Specifications of PSMN1R7-25YLC,115
Related parts for PSMN1R7-25YLC,115
PSMN1R7-25YLC,115 Summary of contents
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... PSMN1R7-25YLC N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... total gate charge see Simplified outline SOT669 (LFPAK; Power-SO8) Description plastic single-ended surface-mounted package; 4 leads Marking code 1C725L All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC Min = 4 see Figure 14; - Figure 15 Graphic symbol mb G mbb076 ...
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... Figure 3 003aaf810 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 -55 - 670 - = 25 ° ...
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... Product data sheet N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower ( DSon All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC 003a a f 824 ( =10 μ 100 μ 100 (V) DS © NXP B.V. 2011. All rights reserved. 003aaf811 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN1R7-25YLC Product data sheet N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC Min Typ Max - 0.78 0.92 003aaf812 t p δ ...
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... Figure see D DS see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC Min Typ = 25 ° -55 °C 22 °C; 1.05 1.54 = 150 °C 0 -55 ° ° 150 °C - ...
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... DS see Figure 18 003a a f 813 (mΩ) 2 2 2 (V) DS Fig 7. Drain-source on-state resistance as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC Min Typ Max - 0.8 1 003a a f 814 (V) GS © NXP B.V. 2011. All rights reserved. ...
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... N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower 003a a f 819 60 80 100 I (A) D Fig 9. 003a a f 818 V Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC 100 °C = 150 ° Transfer characteristics; drain current as a function of gate-source voltage ...
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... V (V) = 3.0 GS 3.5 4 100 I (A) D Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC (V) = 10V GS 1.5 1 0 factor as a function of junction temperature ( 20V ...
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... (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC 100 150 ° 0.3 0.6 0.9 voltage; typical values 003a a f 444 003a a f 823 = 25 ° ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN1R7-25YLC v.1 20110502 PSMN1R7-25YLC Product data sheet N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN1R7-25YLC © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN1R7-25YLC All rights reserved. Date of release: 2 May 2011 Document identifier: PSMN1R7-25YLC ...