PSMN1R7-30YL_10 NXP [NXP Semiconductors], PSMN1R7-30YL_10 Datasheet
PSMN1R7-30YL_10
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PSMN1R7-30YL_10 Summary of contents
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... PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 04 — 20 April 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... V; see DS repetitive see Figure 3 drain-source avalanche energy Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL Min Typ = 36 Figure 17 [2][3][ Graphic symbol mbb076 © ...
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... ° see Figure ° 100 A; GS j(init) D ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL Min Typ Max - - - [ 100 [ 100 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac266 (1) (2) ( (ms) AL © NXP B.V. 2010. All rights reserved. ...
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... Product data sheet N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK = DSon DS D (1) 1 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL 10 μs 100 μ 100 (V) DS Min Typ - 0 ...
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... Figure 17; see Figure see Figure 17; see Figure MHz °C; see Figure 19 j All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL Min Typ = 1.3 1.7 0. ...
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... Figure /dt = -100 A/µ 003aac449 ( 2.8 2.6 2.4 2 (V) DS Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL Min Typ = 4 0. DSon (mΩ (V) = 3.4 GS ...
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... R DSon (mΩ) 2.5 2.0 1.5 1 (V) GS Fig 11. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL 003aac453 = 150 ° ° (V) GS 003aac451 (V) GS © ...
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... Fig 13. Source (diode forward) current as a function of 003aab271 V GS (th) (V) typ max Fig 15. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL 175 ° 0.0 0.2 0.4 0.6 source-drain (diode forward) voltage; typical ...
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... Fig 17. Gate charge waveform definitions 003aac448 ( (nC) G Fig 19. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK 100 150 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL 003aac447 25 °C 0.8 1.0 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...
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... N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL Supersedes PSMN1R7-30YL_3 PSMN1R7-30YL_2 © NXP B.V. 2010. All rights reserved ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 20 April 2010 PSMN1R7-30YL Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 April 2010 Document identifier: PSMN1R7-30YL ...