PSMN3R2-25YLC,115 NXP Semiconductors, PSMN3R2-25YLC,115 Datasheet - Page 5
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PSMN3R2-25YLC,115
Manufacturer Part Number
PSMN3R2-25YLC,115
Description
MOSFET Power N-Ch 25V 3.4 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN3R2-25YLC115.pdf
(15 pages)
Specifications of PSMN3R2-25YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.4 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1781pF @ 12V
Power - Max
79W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065203115
NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN3R2-25YLC
Product data sheet
Symbol
R
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
1e-6
Transient thermal impedance from junction to mounting base as a function of pulse duration
δ = 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
single shot
10
-5
N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 01 — 2 May 2011
Conditions
see
10
Figure 5
-3
10
-2
PSMN3R2-25YLC
Min
-
10
P
-1
t
Typ
1.72
p
T
© NXP B.V. 2011. All rights reserved.
t
p
003aaf842
δ =
(s)
Max
1.9
T
t
p
t
1
Unit
K/W
5 of 15