PSMN3R2-30YLC,115 NXP Semiconductors, PSMN3R2-30YLC,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN3R2-30YLC,115
• Description: MOSFET Power N-Ch 30V 3.5mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN3R2-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 92 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 29.5 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 29.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2081pF @ 15V
• Power - Max: 92W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065193115

NXP Semiconductors
7. Characteristics
Table 7.
PSMN3R2-30YLC
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
V
V
I
I
V
V
Conditions
I
I
see
I
I
V
V
V
see
V
see
V
see
V
see
f = 1 MHz
see
I
see
I
I
see
see
T
R
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 10 mA; V
= 1 mA; V
= 25 A; V
= 25 A; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 °C; see
Rev. 01 — 2 May 2011
Figure
Figure 12
Figure
Figure 12
Figure
Figure
Figure
Figure
Figure 15
= 30 V; V
= 30 V; V
= 15 V; V
= 15 V; R
= 16 V; V
= -16 V; V
= 4.5 V; I
= 4.5 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
10; see
12; see
12; see
14; see
14; see
14; see
DS
DS
DS
DS
DS
DS
D
D
D
D
= 0 V; V
DS
GS
GS
DS
GS
L
GS
GS
DS
= 15 V; see
= 25 A; T
= 25 A; T
= 15 V; V
= 15 V; V
= 15 V; V
= V
= V
= 25 A; T
= 25 A; T
= 0.6 Ω; V
Figure 16
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
Figure 11
Figure 13
Figure 13
Figure 15
Figure 15
Figure 15
GS
; T
; T
GS
; T
j
j
j
j
GS
GS
GS
j
j
j
j
j
= 10 V
= 25 °C;
= -55 °C
= 25 °C;
= 150 °C;
j
j
j
j
GS
= 25 °C
= 150 °C
= 25 °C
= 25 °C;
= 150 °C;
= 150 °C
= 25 °C
= -55 °C
Figure
= 25 °C
= 10 V;
= 4.5 V;
= 4.5 V;
= 4.5 V;
14;
PSMN3R2-30YLC
Min
30
27
1.05
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.53
-
-
-
-
-
-
3.75
-
2.9
-
2
29.5
14.2
29
3.9
3
0.9
4.1
2.27
2081
432
141
19.5
24
31
14
© NXP B.V. 2011. All rights reserved.
-
Max
-
-
1.95
-
2.25
1
100
100
100
4.55
7.45
3.5
5.8
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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