PSMN4R3-80PS,127 NXP Semiconductors, PSMN4R3-80PS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN4R3-80PS,127
• Description: MOSFET Power N-Ch 80V 4.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R3-80PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 104 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 111nC @ 10V
• Input Capacitance (ciss) @ Vds: 8161pF @ 40V
• Power - Max: 306W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065171127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN4R3-80PS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package
(A)
I
D
200
160
120
80
40
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf630
( ° C)
200
Rev. 03 — 18 April 2011
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 80 V; R
p
p
≤ 10 µs; T
≤ 10 µs; T
Fig 2.
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
P
(%)
der
120
= 100 °C; see
= 25 °C; see
80
40
= 50 Ω; unclamped
Figure 2
0
= 25 °C; I
function of mounting base temperature
Normalized total power dissipation as a
0
mb
mb
= 25 °C;
= 25 °C
GS
D
= 20 kΩ
50
= 120 A;
Figure 1
Figure 1
PSMN4R3-80PS
100
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
260
Max
80
80
20
120
120
688
306
120
688
676
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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