PSMN4R5-30YLC,115 NXP Semiconductors, PSMN4R5-30YLC,115 Datasheet - Page 12

• Manufacturer Part Number: PSMN4R5-30YLC,115
• Description: MOSFET Power N-CH 30 V 4.8 mOhms LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R5-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 61 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 20.5 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 20.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1324pF @ 15V
• Power - Max: 61W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065073115

NXP Semiconductors
9. Revision history
Table 8.
PSMN4R5-30YLC
Product data sheet
Document ID
PSMN4R5-30YLC v.3
Modifications:
PSMN4R5-30YLC v.2
Revision history
20110705
20101130
Release date
•
Various changes to content.
N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 3 — 5 July 2011
Change notice
-
-
PSMN4R5-30YLC
Supersedes
PSMN4R5-30YLC v.2
PSMN4R5-30YLC v.1
© NXP B.V. 2011. All rights reserved.
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