BLA1011-300 NXP Semiconductors, BLA1011-300 Datasheet - Page 2

• Manufacturer Part Number: BLA1011-300
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-300

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-957
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-300,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLA1011-300_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLA1011-300
Symbol
V
V
I
T
T
Symbol
Z
D
stg
j
th(j-h)
DS
GS
Connected to flange
Parameter
transient thermal impedance from
junction to heatsink
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
-
Rev. 02 — 5 February 2008
Description
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
Conditions
T
Conditions
case
= 2 %; P
[1]
= 25 C; t
Simplified outline
L
= 300 W
p
1
2
= 50 s;
Avionics LDMOS transistors
BLA1011-300
Min
-
-
-
3
0.5
65
Symbol
© NXP B.V. 2008. All rights reserved.
Typ
0.1
Max
65
+15
15
+150
200
2
sym112
Max
0.15
Version
SOT957A
1
3
Unit
V
V
A
C
C
Unit
K/W
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