BLA1011-300 NXP Semiconductors, BLA1011-300 Datasheet - Page 3

• Manufacturer Part Number: BLA1011-300
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-300

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-957
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-300,112

NXP Semiconductors
6. Characteristics
7. Application information
BLA1011-300_2
Product data sheet
Table 6.
T
Table 7.
Mode of operation: Pulsed RF; t
otherwise specified.
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
P
G
RL
t
t
P
DSS
DSX
GSS
r
f
j
fs
D
(BR)DSS
GS(th)
GSq
L
droop(pulse)
DS(on)
p
= 25 C unless otherwise specified.
in
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source quiescent
voltage
drain leakage current
drain cut-off current
gate leakage current
forward
transconductance
drain-source on-state
resistance
Characteristics
Application information
Parameter
output power
power gain
input return loss
drain efficiency
rise time
fall time
pulse droop power
Rev. 02 — 5 February 2008
p
= 50 s; = 2 %; V
Conditions
V
V
V
V
V
V
V
V
GS
DS
DS
GS
GS
GS
DS
GS
= 0 V; I
= 20 V; I
= 32 V; I
= 0 V; V
= V
= 13 V; V
= 20 V; I
= V
GS(th)
GS(th)
Conditions
P
P
P
P
P
P
L
L
L
L
L
L
= 300 W
= 300 W
= 300 W
= 300 W
= 300 W
= 300 W
D
DS
D
D
D
= 3.75 mA
+ 6 V; V
+ 6 V; I
DS
= 375 mA
= 150 mA
= 24 A
= 32 V
= 0 V
DS
= 32 V; I
D
DS
=13.5 A
= 10 V
Dq
Min
300
15
-
52
-
-
-
Avionics LDMOS transistors
= 150 mA; T
BLA1011-300
Min
65
5.2
-
-
50
-
-
-
Typ
-
16.5
10
57
30
5
0
Typ
-
5.6
5.48
-
63
-
15
55
© NXP B.V. 2008. All rights reserved.
case
Max
-
-
-
-
50
50
0.2
= 25 C; unless
Max
-
6.2
-
3.3
73
60
-
80
Unit
W
dB
dB
%
ns
ns
dB
3 of 11
Unit
V
V
V
A
nA
S
m
A