BLA1011-300 NXP Semiconductors, BLA1011-300 Datasheet - Page 9

• Manufacturer Part Number: BLA1011-300
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-300

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-957
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-300,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLA1011-300_2
Product data sheet
Document ID
BLA1011-300_2
Modifications:
BLA1011-300_1
Revision history
Table 10.
Acronym
IFF
LDMOS
LDMOST
RF
TCAS
VSWR
Release date
20080205
20070403
•
•
Section 1.2 “Features” on page
Added
Abbreviations
Section 8 “Test information” on page
Description
Identification Friend or Foe
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Traffic Collision Avoidance System
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 5 February 2008
1: added RoHS compliance statement
6.
Change notice
-
-
Avionics LDMOS transistors
BLA1011-300
Supersedes
BLA1011-300_1
-
© NXP B.V. 2008. All rights reserved.
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