IXFH6N100F IXYS
IXFH6N100F
Manufacturer Part Number
IXFH6N100F
Description
MOSFET Power HiPerRF Power Mosfet 1000V 6A
Manufacturer
IXYS
Specifications of IXFH6N100F
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.9 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247AD
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH6N100F
Manufacturer:
IXYS
Quantity:
15 500