STU8N65M5 STMicroelectronics, STU8N65M5 Datasheet - Page 9
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STU8N65M5
Manufacturer Part Number
STU8N65M5
Description
MOSFET N-CH 650V 7A IPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP8N65M5.pdf
(20 pages)
Specifications of STU8N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11365-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STU8N65M5
Manufacturer:
STMicroelectronics
Quantity:
200
STD/F/I/P/U8N65M5
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 16531 Rev 2
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
V
Vgs
Vds
P
Id
i
V
W
i
10%Vds
=20V=V
90%Vds
90%Vgs
P
w
on
on
2200
μF
1kΩ
GMAX
Vgs(I(t))
circuit
I
V
D
))
D
I
G
2.7kΩ
12V
=CONST
Tdelay-off
47kΩ
-off
L
Trise
Trise
D.U.T.
Tcross -over
47kΩ
100Ω
Tfall
Tfall
-
2200
μF
100nF
Concept waveform for Inductive Load Turn-off
Test circuits
3.3
μF
D.U.T.
AM01469v1
AM01471v1
AM05540v1
10%Id
1kΩ
90%Id
V
V
V
9/20
G
DD
DD