BUK9Y40-55B/C,115 NXP Semiconductors, BUK9Y40-55B/C,115 Datasheet - Page 5

• Manufacturer Part Number: BUK9Y40-55B/C,115
• Description: MOSFET N-CH 55V 26A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y40-55B/C,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
Table 6.
BUK9Y40-55B_3
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Source-drain diode
V
t
Q
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
DSS
GSS
rr
d(on)
r
d(off)
f
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
source-drain voltage
reverse recovery time I
recovered charge
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
T
I
T
I
T
I
see
I
T
V
V
T
V
V
T
V
see
V
V
V
see
I
see
V
T
I
T
V
f = 1 MHz; T
see
V
V
T
D
D
D
D
D
S
S
D
j
j
j
j
j
j
j
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
GS
DS
GS
= 0.25 mA; V
= 25 °C
= 0.25 mA; V
= -55 °C
= 1 mA; V
= 175 °C; see
= 1 mA; V
= 1 mA; V
= -55 °C; see
= 175 °C
= 25 °C
= 20 A; V
= 20 A; dI
= 25 °C
= 15 A; V
= 25 °C; see
= 25 °C
Figure 11
Figure 12
Figure 12
Figure 16
Figure 15
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 5 V; I
= 10 V; I
= 4.5 V; I
= 5 V; I
= -10 V; V
= 0 V; V
= 5 V; R
Rev. 03 — 22 February 2008
D
D
GS
DS
S
DS
j
DS
DS
GS
GS
DS
G(ext)
D
/dt = -100 A/μs;
= 25 °C;
= 15 A; T
D
= 15 A; T
GS
GS
L
and
and
DS
= 15 A; T
= 0 V; T
= 44 V; V
= V
= V
= V
= 15 A; T
Figure 14
= 2.2 Ω;
GS
GS
= 15 V; T
= -15 V;
= 25 V;
Figure 11
Figure 11
= 0 V; T
= 0 V;
= 30 V;
= 10 Ω;
= 0 V;
= 0 V;
GS
13
13
GS
GS
; T
;
;
j
j
j
= 175 °C;
j
= 25 °C;
= 25 °C;
GS
j
= 25 °C;
j
j
j
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 5 V;
Min
55
50
0.5
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N-channel TrenchMOS logic level FET
BUK9Y40-55B
Typ
-
-
-
1.5
-
0.02
-
2
2
-
32
-
34
0.85
45
25
11
2
5
765
123
71
17
93
35
72
Max
-
-
-
2
2.3
1
500
100
100
84
36
45
40
1.2
-
-
-
-
-
1020
148
97
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Unit
V
V
V
V
V
μA
μA
nA
nA
mΩ
mΩ
mΩ
mΩ
V
ns
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
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