BUK7Y08-40B/C,115 NXP Semiconductors, BUK7Y08-40B/C,115 Datasheet - Page 5
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BUK7Y08-40B/C,115
Manufacturer Part Number
BUK7Y08-40B/C,115
Description
MOSFET N-CH 40V 75A SOT669
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7Y08-40B115.pdf
(14 pages)
Specifications of BUK7Y08-40B/C,115
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
36.3nC @ 10V
Input Capacitance (ciss) @ Vds
2040pF @ 25V
Power - Max
105W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7Y08-40B
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th (j-mb)
I
10
10
10
10
D
10
10
(A)
10
10
-1
-1
-2
-3
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
-1
-6
Thermal characteristics
0.1
0.05
δ = 0.5
0.2
0.02
single shot
Parameter
thermal resistance
from junction to
mounting base
10
Limit R
-5
DSon
1
= V
DS
/ I
Conditions
see
All information provided in this document is subject to legal disclaimers.
D
10
-4
Figure 5
Rev. 03 — 7 April 2010
DC
10
10
-3
N-channel TrenchMOS standard level FET
10
t
100 μs
1 ms
10 ms
100 ms
-2
p
= 10 μs
10
2
BUK7Y08-40B
Min
-
10
P
-1
V
DS
t
Typ
-
p
(V)
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aad506
003aac479
δ =
Max
1.42
t
T
p
t
10
1
3
Unit
K/W
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