STI35N65M5 STMicroelectronics, STI35N65M5 Datasheet - Page 11

• Manufacturer Part Number: STI35N65M5
• Description: MOSFET N-CH 650V 27A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STI35N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 3750pF @ 100V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11332-5

STB/F/I/P/W35N65M5
Dim
L20
L30
∅P
D1
H1
b1
e1
L1
J1
D
Q
A
b
E
e
F
L
c
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
Doc ID 15325 Rev 2
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.044
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
Min
0.6
Package mechanical data
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62
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